20.0-38.0 ghz gaas mmic low noise amplifier 17.0 db small signal gain 3.0 db noise figure single, positive bias supply 100% on-wafer rf testing features absolute maximum ratings supply voltage (vd) supply current (id1,2,3) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +7.0 vdc 70 ma +12.0 dbm -65 to +165 o c -55 to mttf graph 1 mttf graph 1 page 1 of 1 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) output power for 1db compression (p1db) drain bias voltage (vd) supply current (id) units ghz db db db db db db dbm vdc ma min. 20.0 - - - - - - - 3.0 - typ. - 12.0 15.0 17.0 +/-2.0 45.0 3.0 tbd 4.0 45 max. 38.0 - - - - - - - 5.0 60 l1010-bd mimix broadband?s three stage 20.0-38.0 ghz gaas mmic low noise amplifier has a small signal gain of 17.0 db with a noise figure of 3.0 db. the device uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the device is well suited to multiple receiver applications which require broadband performance with simple bias requirements. general description mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. may 2008 - rev 02-may-08
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